VS-HFA16TB120S-M3
FEATURES
- Ultrafast and ultrasoft recovery
- Very low IRRM and Qrr
- Specified at operating conditions
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- Designed and qualified for industrial level
- Material categorization: for definitions of pliance please see .vishay./doc?99912
BENEFITS
- Reduced RFI and EMI
- Reduced power loss in diode and switching transistor
- Higher frequency operation
- Reduced snubbing
- Reduced parts count
DESCRIPTION
VS-HFA16TB120S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb bination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 16 A continuous current, the VS-HFA16TB120S is especially well suited for use as the panion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of...
