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VS-MBRB735-M3 - High Performance Schottky Rectifier

Description

The VS-MBRB7 Schottky rectifier series has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.

Features

  • 150 °C TJ operation.
  • High frequency operation.
  • Low forward voltage drop.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: for definitions of compliance please see www. v.

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Datasheet preview – VS-MBRB735-M3

Datasheet Details

Part number VS-MBRB735-M3
Manufacturer Vishay
File Size 155.55 KB
Description High Performance Schottky Rectifier
Datasheet download datasheet VS-MBRB735-M3 Datasheet
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Full PDF Text Transcription

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www.vishay.com VS-MBRB735-M3, VS-MBRB745-M3 Vishay Semiconductors High Performance Schottky Rectifier, 7.5 A Base cathode 2 2 1 3 D2PAK (TO-263AB) 1 N/C 3 Anode PRIMARY CHARACTERISTICS IF(AV) 7.5 A VR 35 V, 45 V VF at IF 0.57 V IRM 15 mA at 125 °C TJ max. 150 °C EAS Package 7 mJ D2PAK (TO-263AB) Circuit configuration Single FEATURES • 150 °C TJ operation • High frequency operation • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.
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