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VS-MBRB745-M3 Datasheet High Performance Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com VS-MBRB735-M3, VS-MBRB745-M3 Vishay Semiconductors High Performance Schottky Rectifier, 7.5 A Base cathode 2 2 1 3 D2PAK (TO-263AB) 1 N/C 3 Anode PRIMARY CHARACTERISTICS IF(AV) 7.5 A VR 35 V, 45 V VF at IF 0.57 V IRM 15 mA at 125 °C TJ max.

Download the VS-MBRB745-M3 datasheet PDF. This datasheet also includes the VS-MBRB735-M3 variant, as both parts are published together in a single manufacturer document.

General Description

The VS-MBRB7...

Schottky rectifier series has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.

Key Features

  • 150 °C TJ operation.
  • High frequency operation.
  • Low forward voltage drop.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: for definitions of compliance please see www. v.