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VSB3200S - High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation DO-204AC (DO-15).
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC.

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Datasheet Details

Part number VSB3200S
Manufacturer Vishay
File Size 145.30 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VSB3200S Datasheet

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Full PDF Text Transcription

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www.DataSheet.co.kr New Product VSB3200S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation DO-204AC (DO-15) • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3.0 A TJ max. 3.0 A 200 V 50 A 0.
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