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VSMB294008G - High Speed Infrared Emitting Diodes

This page provides the datasheet information for the VSMB294008G, a member of the VSMB294008RG High Speed Infrared Emitting Diodes family.

Datasheet Summary

Description

VSMB294008 series are infrared, 940 nm emitting diodes in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).

Data transmission Miniature light barrier

Features

  • Package type: surface mount.
  • Package form: GW, RGW.
  • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8.
  • Peak wavelength:.
  • p = 940 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity:  = ± 7°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Terminal configurations: gullwing or reserve gullwing.
  • Package matches with detector VEMD2000X01.

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Datasheet preview – VSMB294008G

Datasheet Details

Part number VSMB294008G
Manufacturer Vishay
File Size 154.12 KB
Description High Speed Infrared Emitting Diodes
Datasheet download datasheet VSMB294008G Datasheet
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Full PDF Text Transcription

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www.vishay.com VSMB294008RG, VSMB294008G Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW VSMB294008RG VSMB294008G DESCRIPTION VSMB294008 series are infrared, 940 nm emitting diodes in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). APPLICATIONS • Data transmission • Miniature light barrier • Photointerrupters • Optical switch • Control and drive circuits • Shaft encoders FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.
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