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VT1080C - Dual Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
  • AEC-Q101 qualified 2 VT1080C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT1080C PIN 1 PIN 3 2 3 1.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition PIN 2 K.

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Datasheet preview – VT1080C

Datasheet Details

Part number VT1080C
Manufacturer Vishay
File Size 188.38 KB
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VT1080C Datasheet
Additional preview pages of the VT1080C datasheet.

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Full PDF Text Transcription

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New Product VT1080C, VIT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified 2 VT1080C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT1080C PIN 1 PIN 3 2 3 1 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition PIN 2 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5 A TJ max.
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