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VT2060G Datasheet Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number VT2060G
Manufacturer Vishay
File Size 188.02 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Download VT2060G Download (PDF)

Overview

www.DataSheet.co.kr New Product VT2060G, VIT2060G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
  • AEC-Q101 qualified 2 VT2060G PIN 1 PIN 3 PIN 2 CASE 3 1 VIT2060G PIN 1 PIN 3 2 3 1.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition PIN 2 K.

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