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VT2060G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
  • AEC-Q101 qualified 2 VT2060G PIN 1 PIN 3 PIN 2 CASE 3 1 VIT2060G PIN 1 PIN 3 2 3 1.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition PIN 2 K.

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Datasheet Details

Part number VT2060G
Manufacturer Vishay
File Size 188.02 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VT2060G Datasheet
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Full PDF Text Transcription

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www.DataSheet.co.kr New Product VT2060G, VIT2060G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified 2 VT2060G PIN 1 PIN 3 PIN 2 CASE 3 1 VIT2060G PIN 1 PIN 3 2 3 1 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition PIN 2 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
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