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VT2060G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Vishay

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VT2060G Dual High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – VT2060G

Datasheet Details

Part number	VT2060G
Manufacturer	Vishay
File Size	188.02 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VT2060G Datasheet
Additional preview pages of the VT2060G datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
AEC-Q101 qualified 2 VT2060G PIN 1 PIN 3 PIN 2 CASE 3 1 VIT2060G PIN 1 PIN 3 2 3 1.
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
Halogen-free according to IEC 61249-2-21 definition PIN 2 K.

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Published: Feb 7, 2012 |