VT2060G - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	VT2060G
Manufacturer	Vishay
File Size	151.64 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VT2060G Datasheet
Additional preview pages of the VT2060G datasheet.

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Full PDF Text Transcription

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www.vishay.com VT2060G, VFT2060G, VBT2060G, VIT2060G Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT2060G 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT2060G 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.

Published: Feb 5, 2016 |