MBR40H35PT Description
MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT .vishay. Vishay General Semiconductor Dual mon Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance 3 2 1 TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package Diode variations 40 A 35 V, 45 V, 50 V, 60 V 400 A 0.55 V, 0.60 V 175 °C TO-247AD mon cathode.
MBR40H35PT Key Features
- Power pack
- Guardring for overvoltage protection
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 260 °C, 40 s
- Material categorization: For definitions of pliance