SFH617A Overview
Description
The 110 °C rated SFH617A (DIP) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package.
Key Features
- Operating temperature from -55 °C to +110 °C
- Good CTR linearity depending on forward current
- Isolation test voltage, 5300 VRMS
- High collector emitter voltage, VCEO = 70 V
- Low saturation voltage
- Fast switching times
- Low CTR degradation
- Temperature stable
