SI3590DV Description
Si3590DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.077 at VGS = 4.5 V 0.120 at VGS = 2.5 V P-Channel - 30 0.170 at VGS = - 4.5 V 0.300 at VGS = - 2.5 V ID (A) 3 2 -2 - 1.2 G1 3 mm S2 G2 TSOP-6 Top.
SI3590DV Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFET
- Ultra Low RDS(on) N- and P-Channel for High
- Optimized for High-Side/Low-Side
- Minimized Conduction Losses
- pliant to RoHS Directive 2002/95/EC