SI5855DC Description
Si5855DC Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.110 at VGS = - 4.5 V - 20 0.160 at VGS = - 2.5 V 0.240 at VGS = - 1.8 V ID (A) - 3.6 - 3.0 - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V).
SI5855DC Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFETs
- Ultra Low Vf Schottky
- Si5853DC Pin patible
- pliant to RoHS Directive 2002/95/EC
SI5855DC Applications
- Charging Circuit in Portable Devices