SI5933DC Description
Dual P-Channel 1.8 V (G-S) MOSFET Si5933DC Vishay Siliconix PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.110 at VGS = - 4.5 V 0.160 at VGS = - 2.5 V 0.240 at VGS = - 1.8 V ID (A) - 3.6 - 3.0 - 2.4 Qg (Typ.) 5.1 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 G2 D2 Marking.
SI5933DC Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFETs: 1.8 V Rated
- pliant to RoHS Directive 2002/95/EC