Viva Electronics VM2001
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | VM2001 |
|---|---|
| Datasheet | VM2001 Download |
| Manufacturer | Viva Electronics |
| Description | 20V P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. PPAK3X3 Pin Configuration D DD DD SG SS G S BVDSS -20V RDSON 8.3mΩ ID -55AFEATURES
● -20V,-55A, RDS(ON) =8.3mΩ@VGS = -4.5V● Improved dv/dt capability
● Fast switching
● Green Device Available
● Suit for -1.8V Gate Drive
APPLICATIONS
APPLICATIONS
● Notebook● Load Switch
● Networking
● Hand-Held Instruments
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25℃) Power Dissipation – Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Rating -20 ±10 -55 -35 -220 157 -56 51 0.41 -55 to 150 -55 to 150 Units V V A A A mJ A W W/℃ ℃ ℃ Thermal Characteristics Symbol RθJA RθJC Parameter Thermal Resistance Junction to ambient Thermal Resistance Junction to Case Typ. ----- Max.
