VM2002 Datasheet | Viva Electronics

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration D DDDD S SSG 20V N-Channel MOSFETs BVDSS RDSON 20V 4.9mΩ 65A Features - 20V,65A, RDS(ON) =4.9mΩ @VGS = 4.5V - Improved dv/dt capability - Green Device Available - Suit for 1.8V Gate Drive Applications Applications - Load Switch - POL Applications - SMPS 2nd SR - Li-Battery Protection Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS IDM EAS IAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain Current - Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25℃) Power Dissipation - Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Rating 20 ±10 65 41 260 120 49 45 0.36 -55 to 150 -55 to 150 Units V V A A A m J A W W/℃ ℃ ℃ Thermal Characteristics Symbol RθJA...