Viva Electronics VM2002
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | VM2002 |
|---|---|
| Datasheet | VM2002 Download |
| Manufacturer | Viva Electronics |
| Description | 20V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. PPAK3X3 Pin Configuration D DDDD S SSG G S 20V N-Channel MOSFETs BVDSS RDSON ID 20V 4.9mΩ 65AFEATURES
● 20V,65A, RDS(ON) =4.9mΩ @VGS = 4.5V● Improved dv/dt capability
● Green Device Available
● Suit for 1.8V Gate Drive
APPLICATIONS
APPLICATIONS
● Load Switch● POL
APPLICATIONS
● SMPS 2nd SR● Li-Battery Protection
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25℃) Power Dissipation – Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Rating 20 ±10 65 41 260 120 49 45 0.36 -55 to 150 -55 to 150 Units V V A A A mJ A W W/℃ ℃ ℃ Thermal Characteristics Symbol RθJA RθJC Parameter Thermal Resistance Junction to ambient Thermal Resistance Junction to Case Typ. ----- Max.
