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VM6002 - 65V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 65V,35A, RDS(ON) =16mΩ @VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • ESD protected up to ±1.5kV.

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Datasheet Details

Part number VM6002
Manufacturer Viva Electronics
File Size 431.58 KB
Description 65V N-Channel MOSFET
Datasheet download datasheet VM6002 Datasheet

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Full PDF Text Transcription

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VM6002 65V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration D D D DD D D DD G G S SS S SS G S BVDSS RDSON ID 65V 16mΩ 35A Features  65V,35A, RDS(ON) =16mΩ @VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  ESD protected up to ±1.
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