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VM6501 - 65V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 65V,70A, RDS(ON) =5.2mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet Details

Part number VM6501
Manufacturer Viva Electronics
File Size 619.98 KB
Description 65V N-Channel MOSFET
Datasheet download datasheet VM6501 Datasheet

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Full PDF Text Transcription

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VM6501 65V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration D DDDD S S SG G S BVDSS RDSON ID 65V 5.2mΩ 70A Features  65V,70A, RDS(ON) =5.
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