VM6506 Datasheet | Viva Electronics

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration D DDDD S SSG 65V N-Channel MOSFETs BVDSS RDSON 65V 8.3mΩ 46A Features - 65V,46A, RDS(ON) =8.3mΩ @VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - Motor Drive - Power Tools - LED Lighting - Quick Charger Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS IDM EAS IAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain Current - Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanched Current2 Power Dissipation (TC=25℃) Power Dissipation - Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Rating 65 ±20 46 29.1 184 45 30 42 0.33 -55 to 150 -55 to 150 Units V V A A A m J A W W/℃ ℃ ℃ Thermal Characteristics...