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VM6506 - 65V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 65V,46A, RDS(ON) =8.3mΩ @VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number VM6506
Manufacturer Viva Electronics
File Size 623.33 KB
Description 65V N-Channel MOSFET
Datasheet download datasheet VM6506 Datasheet

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Full PDF Text Transcription

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VM6506 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration D DDDD S SSG G S 65V N-Channel MOSFETs BVDSS RDSON ID 65V 8.3mΩ 46A Features  65V,46A, RDS(ON) =8.
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