Datasheet4U Logo Datasheet4U.com

WML10N60VD - Super Junction Power MOSFET

Datasheet Summary

Description

WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance.

WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency.

Features

  • VDS =650V @ Tj,max.
  • IDM =12.5A.
  • Typ. RDS(on) =0.8Ω.
  • 100% UIS tested.
  • Pb-free plating, Halogen free.

📥 Download Datasheet

Datasheet preview – WML10N60VD

Datasheet Details

Part number WML10N60VD
Manufacturer WAYON
File Size 577.27 KB
Description Super Junction Power MOSFET
Datasheet download datasheet WML10N60VD Datasheet
Additional preview pages of the WML10N60VD datasheet.

📁 Similar Datasheet

  • WML-C06 - Module (MITSUMI ELECTRIC)
Other Datasheets by WAYON

Full PDF Text Transcription

Click to expand full text
WML10N60VD, WMK10N60VD, WMH10N60VD, WMM10N60VD WMN10N60VD, WMO10N60VD, WMP10N60VD, WMG10N60VD 600V 0.8Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency. Features  VDS =650V @ Tj,max  IDM =12.5A  Typ. RDS(on) =0.
Published: |