WEITRON 2SD313
NPN Silicon Epitaxial Power Transistor
| Part No. | 2SD313 |
|---|---|
| Datasheet | 2SD313 Download |
| Manufacturer |  WEITRON |
| Description | NPN Silicon Epitaxial Power Transistor |
| Buy | Stock & Price |
FEATURES
: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 COLLECTOR 2 BASE 1 3 EMITTERABSOLUTE MAXIMUM RATINGS
(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA=25°C TC=25°C Derate above 25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ Tstg 2SD313 1 23 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Value 60 60 5.0 3.0 1.75 30 0.24 +150 -55 to +150 Unit V V V A W W/˚C ˚C ˚CELECTRICAL CHARACTERISTICS
Characteristics Collector-Base Breakdown Voltage IC=100µA, IE=0 Collector-Emitter Breakdown Voltage IC=1mA, IB=0 Emitter-Base Breakdown Voltage IE=100µA, IC=0 Collector Cut-Off Current VCB=60V, IE=0 Emitter-Cut-Off Current VEB=60V,IE=0 Emitter-Cut-Off Current VEB=4.0V, IC=0 WEITRON Symbol BVCBO BVCEO
