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2SD313

Manufacturer: Inchange Semiconductor

2SD313 datasheet by Inchange Semiconductor.

2SD313 datasheet preview

2SD313 Datasheet Details

Part number 2SD313
Datasheet 2SD313-INCHANGE.pdf
File Size 209.82 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
2SD313 page 2

2SD313 Overview

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·plement to Type 2SB507 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier.

2SD313 from other manufacturers

View 2SD313 datasheet index

Brand Logo Part Number Description Other Manufacturers
UTC Logo 2SD313 NPN Transistor UTC
SavantIC Logo 2SD313 SILICON POWER TRANSISTOR SavantIC
WEITRON Logo 2SD313 NPN Silicon Epitaxial Power Transistor WEITRON
Dc Components Logo 2SD313 NPN Transistor Dc Components
Inchange Semiconductor logo - Manufacturer

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