| Part number | 2SD313 |
|---|---|
| Download | 2SD313 Datasheet (PDF) |
| File Size | 209.82 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
2SD313 | NPN Transistor |
SavantIC |
2SD313 | SILICON POWER TRANSISTOR |
WEITRON |
2SD313 | NPN Silicon Epitaxial Power Transistor |
Dc Components |
2SD313 | NPN Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·plement to Type 2SB507 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier.
