Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 2.0A
- plement to Type 2SB507
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for the output stage of 15W to 25W AF power...
