Datasheet Details
| Part number | 2SD312 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.11 KB |
| Description | NPN Transistor |
| Datasheet | 2SD312-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD312.
| Part number | 2SD312 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.11 KB |
| Description | NPN Transistor |
| Datasheet | 2SD312-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=100℃ Tj Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD312 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Part Number | Description |
|---|---|
| 2SD310 | NPN Transistor |
| 2SD313 | NPN Transistor |
| 2SD314 | NPN Transistor |
| 2SD315 | NPN Transistor |
| 2SD316 | NPN Transistor |
| 2SD317 | NPN Transistor |
| 2SD318 | NPN Transistor |
| 2SD320 | NPN Transistor |
| 2SD325 | NPN Transistor |
| 2SD330 | NPN Transistor |