Part 2SD316
Description NPN Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 175.52 KB
Inchange Semiconductor

2SD316 Overview

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 5.0A - Excellent Safe Operating Area - Minimum Lot-to-Lot variations for robust device performance and reliable operation.