2SD317
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SD317
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 181.14 KB