Datasheet Details
| Part number | 2SD314 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.26 KB |
| Description | NPN Transistor |
| Datasheet | 2SD314-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD314.
| Part number | 2SD314 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.26 KB |
| Description | NPN Transistor |
| Datasheet | 2SD314-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·Complement to Type 2SB508 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 60 V 60 V 5 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8.0 A 1.75 W 30 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 4.16 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD314 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Part Number | Description |
|---|---|
| 2SD310 | NPN Transistor |
| 2SD312 | NPN Transistor |
| 2SD313 | NPN Transistor |
| 2SD315 | NPN Transistor |
| 2SD316 | NPN Transistor |
| 2SD317 | NPN Transistor |
| 2SD318 | NPN Transistor |
| 2SD320 | NPN Transistor |
| 2SD325 | NPN Transistor |
| 2SD330 | NPN Transistor |