2SD314 datasheet by Inchange Semiconductor.
| Part number | 2SD314 |
|---|---|
| Datasheet | 2SD314-INCHANGE.pdf |
| File Size | 187.26 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·plement to Type 2SB508 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier.
View all Inchange Semiconductor datasheets
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|---|---|
| 2SD310 | NPN Transistor |
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| 2SD316 | NPN Transistor |
| 2SD317 | NPN Transistor |
| 2SD318 | NPN Transistor |
| 2SD320 | NPN Transistor |
| 2SD325 | NPN Transistor |
| 2SD330 | NPN Transistor |
