Datasheet Details
| Part number | 2SD310 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.43 KB |
| Description | NPN Transistor |
| Datasheet | 2SD310-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD310.
| Part number | 2SD310 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.43 KB |
| Description | NPN Transistor |
| Datasheet | 2SD310-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 6 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD310 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;Ib=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A;
IB= 1.2A hFE-1 DC Current Gain IC= 1A ;
| Part Number | Description |
|---|---|
| 2SD312 | NPN Transistor |
| 2SD313 | NPN Transistor |
| 2SD314 | NPN Transistor |
| 2SD315 | NPN Transistor |
| 2SD316 | NPN Transistor |
| 2SD317 | NPN Transistor |
| 2SD318 | NPN Transistor |
| 2SD320 | NPN Transistor |
| 2SD325 | NPN Transistor |
| 2SD330 | NPN Transistor |