Part 2SD315
Description NPN Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 205.45 KB
Inchange Semiconductor

2SD315 Overview

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A - Complement to Type 2SB509 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.