Datasheet Details
| Part number | 2SD315 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.45 KB |
| Description | NPN Transistor |
| Datasheet | 2SD315-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD315.
| Part number | 2SD315 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.45 KB |
| Description | NPN Transistor |
| Datasheet | 2SD315-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·Complement to Type 2SB509 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 35 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD315 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD310 | NPN Transistor |
| 2SD312 | NPN Transistor |
| 2SD313 | NPN Transistor |
| 2SD314 | NPN Transistor |
| 2SD316 | NPN Transistor |
| 2SD317 | NPN Transistor |
| 2SD318 | NPN Transistor |
| 2SD320 | NPN Transistor |
| 2SD325 | NPN Transistor |
| 2SD330 | NPN Transistor |