2SD315 Overview
Description
With TO-66 package - Complement to type 2SB509 APPLICATIONS - For use in audio frequency power amplifier application PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 60 60 5 4 10 35 150 -40~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SD315 SYMBOL MAX UNIT V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Collector-emitter breakdown voltage IC=10mA ;IB=0 IC=2A; IB=0.2A IC=1A ; VCE=2V VCB=20V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=0.1A ; VCE=2V IC=0.5A ; VCE=5V 60 V Collector-emitter saturation voltage 1.0 V Base-emitter on voltage 1.5 V Collector cut-off current 0.1 mA Emitter cut-off current 1.0 mA DC current gain 40 320 DC current gain 40 Transition frequency 8 MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD315 Fig.2 outline dimensions 3.
