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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SD313
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general-purpose amplifier and switching applications.
Pinning
1 = Base 2 = Collector 3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation(TC=25oC) Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC PD PD TJ TSTG
60 60 5 3 2 30 +150 -55 to +150
Unit V V V A W W oC oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151 Φ(3.83)
.173(4.40) Typ
.055(1.39)
.045(1.15)
.625(15.87) .570(14.48)
123
.295(7.49) .220(5.58)
.350(8.90) .330(8.38)
.640 (16.25)
Typ
.055(1.40) .