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BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C
General Purpose Transistor PNP Silicon
COLLECTOR 3
1 BASE
2 EMITTER
Maximum Ratings ( TA=25 C unless otherwise noted)
3
1 2
SOT-23
MARKING DIAGRAM 3
XX = Device Code (See 1 2 Table Below)
Rating
Collector-Emitter Voltage
BC856
BC857
BC858,BC859
Collector-Base Voltage
BC856
BC857
BC858,BC859
Emitter-Base VOltage
Collector Current-Continuous
Symbol VCEO
VCBO VEBO
IC
Value -65 -45 -30 -80 -50 -30 -5.0
-100
Unit V
V V mAdc
Thermal Characteristics
Characteristics Total Device Dissipation FR-5 Board (1) (Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C Derate above 25 C
Thermal Resistance, Junction to Ambient
Symbol PD
R θJA
PD R θJA
Max
225 1.
BC856A Datasheet
