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PNP Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
MAXIMUM RATINGS ( TA=25°C unless otherwise noted)
Rating
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current Continuous
IC
Total Device Dissipation TA=25°C Junction Temperature Range
PD TJ
Storage Temperature Range
Tstg
BC869
1. BASE 2. COLLECTOR
3. EMITTER
1 2 3
SOT-89
Value -32 -20 -5.0 -1.0 500 +150
-65 to +150
Unit V V V A
mW ˚C
˚C
OFF CHARACTERISTICS
Characteristics Collector-Base Breakdown Voltage, IC = -0.1mA, IE = 0 Collector-Emitter Breakdown Voltage, IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage, IE = -0.1mA,IC = 0 Collector Cut-o Current, VCB = -25V, IE = 0 Emitter Cut-o Current, VEB = -5.
BC869 Datasheet
