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BC869 Datasheet PDF

NXP Semiconductors BC869

PNP medium power transistor

Part No. BC869
Datasheet BC869 Download
Manufacturer
NXP Semiconductors
Description PNP medium power transistor
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BC869 datasheet page 1 preview

FEATURES AND BENEFITS

● High current
● Three current gain selections
● High power dissipation capability
● Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
● Leadless very small SMD plastic package with medium power capability (SOT1061)
● AEC-Q101 qualified 1.3

APPLICATIONS

● Linear voltage regulators
● High-side switches
● Battery-driven devices
● Power management
● MOSFET drivers
● Amplifiers 1.4 Quick reference data Table 2. Symbol VCEO IC ICM Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current single pulse; tp  1 ms Min Typ Max Unit - - 20 V - - 2 A - - 3 A NXP Semiconductors BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Table 2. Symbol hFE Quick reference data …continued Parameter Conditions DC current gain hFE selection -16 hFE selection -25 VCE = 1 V; IC = 500 mA VCE = 1 V; IC = 500 mA VCE = 1 V; IC = 500 mA [1] Pulse test: tp  300 s;  = 0.02. 2. Pinning information Min Typ Max Unit [1] 85 - 375 [1] 100 - 250 [1] 160 - 375 Table 3.
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