WILLAS BC869
PNP Transistor
FEATURES
● Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANS●ISLoTwOpRro(fiPleNsPur)face mounted application in order to optimize board space. FEATU●RLEoSw power loss, high efficiency.● NP●NHiCghomcuprrleenmt ceanptabtoilitBy,Clo8w6f8orward voltage drop.
● Low●● GHViugoahrltdsaurigrngegefocar poavebrilvitoyl.tage protection.
● Hig●hUlCtrua rhriegnh-tspeed switching.
● Pb●-FSrileiceonpeapcitkaaxgiael pilsanaavr achiliap,bmleetal silicon junction. Ro●HLMSeIaLpd-rS-ofTrdeDue-c1p9ta5frot0sr0mp/2ea2ec8tkeinnvgircoonmdeenstaulfsfitxan”Gda”rds of Ha●loRgoeHnS pfrreodeucptrfoodr puacctkifnogrcpoadecksuinffgix "cGo"de suffix “H” Halogen free product for packing code suffix "H" Mechanical data MAXIM● UEpMoxRy A: UTLIN94G-VS0 r(aTtae=