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KTC3876 - Plastic-Encapsulate Transistors

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Datasheet Details

Part number KTC3876
Manufacturer WEITRON
File Size 57.27 KB
Description Plastic-Encapsulate Transistors
Datasheet download datasheet KTC3876 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Plastic-Encapsulate Transistors NPN Silicon KTC3876 COLLECTOR BASE EMITTER 3 1 2 SOT-23 MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous THERMAL CHARACTERISTICS Characteristics Total Device Dissipation TA =25 C Junction and Storage, Temperature Symbol VCEO VCBO VEBO IC Symbol PD TJ, Tstg Value 30 35 5.0 500 Value 200 -55 to +150 Unit Vdc Vdc Vdc mAdc Unit mW C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1 mA dc, IB=0) Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 35Vdc , IE=0) Emitter Cutoff Current (VEB= 5.