Weitron KTC3875
Plastic-Encapsulate Transistors NPN Silicon
| Part No. | KTC3875 |
|---|---|
| Datasheet | KTC3875 Download |
| Manufacturer |  Weitron |
| Description | Plastic-Encapsulate Transistors NPN Silicon |
| Buy | Stock & Price |
MAXIMUM RATINGS
(Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value 50 60 5.0 150 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD R θJA TJ, Tstg Value 150 1.2 833 -55 to +150 Unit mW mW/ C C/W C Device Marking KTC3875=ALELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= -1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 60Vdc , IE=0) Emitter Cutoff Current (VEB= 5.0 Vdc , I C=0) 1. FR-5=1.0 I I 0.75 I I 0.062 in Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 50 60 5.0 Max 0.1 0.1 Unit Vdc Vdc Vdc uAdc uAdc WEITRON Free Datasheet KTC3875ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (C...
