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Bias Resistor Transistor PNP Silicon
MMUN2111 Series
1 BASE
R1 R2
COLLECTOR 3
2 EMITTER
3
1 2
SOT-23
Maximum Ratings ( TA=25 C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage
Collector Current-Continuous
Symbol VCEO VCBO
IC
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C
Symbol PD
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature Range 1.FR-4 @ minimum pad
2.FR-4 @ 1.0 l 1.0 inch Pad
R θJA TJ,Tstg
Value 50 50 100
Max
246 (1) 400 (2) 1.5 (1) 2.0 (2)
508 311 -55 to +150
Unit Vdc Vdc mAdc
Unit mW mW/ C
C/W
C
l 88
Device Marking and Resistor Values
Device
MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115 MMUN2116
Marking
A6A A6B A6C A6D A6E A6F
R1(K)
10
22 47 10 10 4.
MMUN2116 Datasheet
