| Part number | 1SS226 |
|---|---|
| Manufacturer | WEJ |
| File Size | 98.56 KB |
| Description | DIODE |
| Datasheet | 1SS226-WEJ.pdf |
|
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RoHS 1SS226 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 2 ONIC CMarking:C3 2.9 1.9 0.95 0.95 0.4 Unit:mm TR
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
1SS226 | Switching Diodes | Toshiba Semiconductor |
 |
1SS226 | SILICON EPITAXIAL PLANAR DIODE | EIC |
 |
1SS226 | SURFACE MOUNT FAST SWITCHING DIODE | WON-TOP |
 |
1SS226 | SILICON EPITAXIAL PLANAR DIODE | SEMTECH |
 |
1SS226 | Switching Diodes | LGE |
| Part Number | Description |
|---|---|
| 1SS181 | DIODE |
| 1SS184 | DIODE |
| 1SS187 | DIODE |
| 1SS190 | DIODE |
| 1SS193 | DIODE |
| 1SS196 | DIODE |
| 1SS355 | DIODE |
| 1SS387 | DIODE |
| 1SS388 | DIODE |
| 1SS400 | DIODE |
