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RoHS
2SA1162
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQRENCY,LOW NOISE AMPLIFIER
DComplemen to 2SC2712
Collector-current:Ic=-100mA
.,LTCollector-Emiller Voltage:VCE=-45V
SOT-23
1
1. 2.4 1.3
3
2 1.BASE 2.EMITTER 3.COLLECTOR
2.9 1.9 0.95 0.95 0.4
OUnit:mm
CABSOLUTE MAXIMUM RATINGS ICCharacteristic
Collector-Base Voltage Collector-Emitter Voltage
NEmitter-Base Voltage
Collector Current
OCollector Dissipation Ta=25oC*
Junction Temperature
RStorage Temperature
Symbol
VCBO VCEO VEBO Ic PD Tj Tstg
Rating
-50 -45 -5 -100 225 150 -55~150
(Ta=25 oC)
Unit
V V V mA mW
O
C
O
C
Electrical Characteristics
(Ta=25 oC)
TParameter
Symbol MIN. TYP. MAX.
2SA1162 Datasheet
