FEATURES
* Low current(100mA) * Low voltage(32V) * General purpose swithching and amplification DABSOLUTE MAXIMUM RATINGS
at Ta=25 Characteristic Symbol Rating Unit TCollector-Base Voltage Vcbo 32 V .,LCollector-Emitter Voltage Vceo 32 V Emitter-Base Voltage Veb 5 V Collector Current Ic 100 mA Collector Dissipation Ta=25 * PD 250 mW OJunction Temperature Tj 150 2.9 1.9 0.95 0.95 0.4 Storage Temperature Tstg -65-150 CELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Typ Max Collector-Base Breakdown Voltage BVcbo 32 ICCollector-Emitter Breakdown BVceo 32 Voltage# NEmitter-Base Breakdown Voltage BVebo 5 OCollector Cutoff Current Icbo 100 10 Emitter Cutoff Current Iebo 100 RBase-Emitter Voltage Vbe 550 700 Collector Capacitance Cob 2.5 TDC Current Gain 190 Hfe 110 220 ECCollector-Emitter Saturation Voltage Vce(sat) 120 250 210 LBase-Emitter Saturation Voltage Vbe(sat) 750 850 ETransition Frequency fT 100 Noise figure 10 F J* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
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