BCX51 Datasheet PDF

RoHS BCX51 BCX51 TRANSISTOR (PNP) DFEATURES TPower dissipation PCM: .,LCollector current ICM: Collector-base voltage V(BR)CBO: 0.5 -1 -45 W (Tamb=25℃) A V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage OCollector-emitter breakdown voltage REmitter-base breakdown voltage Collector cut-off current TEmitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions Ic=-100µA, IE=0 IC= -10mA , IB=0 IE=-10µA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 MIN MAX UNIT -45 V -45 V -5 V -0.1 µA -0.1 µA LECDC current gain BCX51 BCX51-10 BCX51-16 ECollector-emitter saturation voltage JBase-emitter voltage WETransition frequency hFE(1) hFE(2) hFE(3) VCE(sat) VCE=-2V, IC=-150mA VCE=-2V, IC=- 5mA VCE=-2V, IC=- 500mA IC=-500 mA, IB= -50mA 63 63 100 63 40 VBE(ON) IC= -500 mA, VCE=-2V 250 160 250 -0.5 -1 V V VCE= -5V, IC=-10mA fT f = 100MHz 50 MHz DEVICE MARKING BCX51=AA BCX51-10=AC BCX51-16=AD WEJ ELECTRONIC CO.