Click to expand full text
RoHS RB421D
SOT-23-3L
RB421D Schottky barrier Diodes
FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability
Marking: D3C
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
ICPeak reverse voltage NDC reverse voltage
Mean rectifying current
OPeak forward surge current RJunction temperature TStorage temperature
Symbol VRM VR IO IFSM Tj Tstg
Limits 40 40 100 1 125
-40~+125
LECElectrical Ratings @TA=25℃ Parameter EForward voltage JReverse current
WECapacitance between terminals
Symbol Min. Typ. Max. Unit VF1 0.55 V VF2 0.34 V IR 30 µA CT 6 pF
1. 9
0. 95¡ À0. 025
1. 02
-
+
TD2.80¡À0.05 CO.,L1.60¡À0.05
Unit V V mA A
℃ ℃
Conditions IF=100mA IF=10mA VR=10V VR=10V, f=1MHZ
0. 35 2. 92¡ À0. 05
WEJ ELECTRONIC CO.
RB421D Datasheet
