WILLAS 2SC1766
NPN Transistor
WILLAS SO1.0TA-S8U9RFPAClEasMOtiUcN-TESnCHcOaTpTKsYuBlAaRtReIETRrRaEnCTsIFiIsERtoS r-2s0V- 200V SOD-123+ PACKAGE FM120-M+ 2SC1766 THRU FM1200-M Pb Free Produc TRANSISFTeOaRtu(NrePsN)
● Batch process design, excellent power dissipation offers FEATURbEeStter reverse leakage current and thermal resistance. z Pb-●FLoroepwteimppirzaoecfikbleoasaguredrfasispceaacmveao. iulnatbeldeapplication in order to RoH● SLopwropdowucetr lfoosrsp, ahcigkhinegfficoiednecys. uffix ”G” Hal●ogHeignh fcruererepnrtocdaupcatbfiloitry,plaowckfionrgwacroddveolstaugffeixd“rHop”. z
● High surge capability. Sm●aGlluFalradtriPngafcokr aogveervoltage protection. z Hig●hUSltrpaeheigdhS-swpeitecdhsinwgitcThinmge. z z LMoow●●isLSMCteiuIloaLicrd-loelS-enfTrSceeDteepo-ni1rpta-9saex5iritmt0asi0vlimpti/t2tleeay2ern8tLasereancvvthueirirploa,n1tmmioeentnatlvasolisllittcaaongndejaurndcstioofn. APPLIC● ARToHIOS NprSoduct for packing code suffix "G" z PowMHeearlcoAghmenapfrnliefeiiecprraod
● Batch process design, excellent power dissipation offers FEATURbEeStter reverse leakage current and thermal resistance. z Pb-●FLoroepwteimppirzaoecfikbleoasaguredrfasispceaacmveao. iulnatbeldeapplication in order to RoH● SLopwropdowucetr lfoosrsp, ahcigkhinegfficoiednecys. uffix ”G” Hal●ogHeignh fcruererepnrtocdaupcatbfiloitry,plaowckfionrgwacroddveolstaugffeixd“rHop”. z
● High surge capability. Sm●aGlluFalradtriPngafcokr aogveervoltage protection. z Hig●hUSltrpaeheigdhS-swpeitecdhsinwgitcThinmge. z z LMoow●●isLSMCteiuIloaLicrd-loelS-enfTrSceeDteepo-ni1rpta-9saex5iritmt0asi0vlimpti/t2tleeay2ern8tLasereancvvthueirirploa,n1tmmioeentnatlvasolisllittcaaongndejaurndcstioofn. APPLIC● ARToHIOS NprSoduct for packing code suffix "G" z PowMHeearlcoAghmenapfrnliefeiiecprraod