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2SC1766 - NPN Transistor

Key Features

  • Small flat package.
  • Low saturation voltage VCE(sat)=-0.5V.
  • High speed switching time.
  • PC=1.0 to 2.0W.
  • High saturation current capability Pb Lead-free 2SC1766.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification NPN Epitaxial Transistor FEATURES  Small flat package.  Low saturation voltage VCE(sat)=-0.5V  High speed switching time  PC=1.0 to 2.0W  High saturation current capability Pb Lead-free 2SC1766 APPLICATIONS  Power amplifier ORDERING INFORMATION Type No. Marking 2SC1766 P1766/Q1766/Y1766 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 2 ICM Peak Collector Current 2 IBM Peak Base Current 0.4 PD Total Power Dissipation 1000 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A A A mW ℃ E049 Rev.A www.gmesemi.