2SC1766PT
2SC1766PT is NPN Epitaxial Transistor manufactured by Chenmko Enterprise.
FEATURE
- Small flat package. (SC-62/SOT-89)
- Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A)
- High speed switching time: tstg= 1.0u Sec (typ.)
- PC= 1.0 to 2.0W (mounted on ceramic substrate).
- High saturation current capability.
4.6MAX. 1.7MAX.
SC-62/SOT-89
1.6MAX. 0.4+0.05
2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1
CONSTRUCTION
- NPN Switching Transistor
MARKING
- h FE Classification P: 1766 Q: Q1766 Y: Y1766
1 1 Base
CIRCUIT
2 Collector ( Heat Sink ) 3 Emitter
0.8MIN.
4.6MAX.
1 B
2 C
3 E
Dimensions in millimeters
SC-62/SOT-89
MAXIMUM RATINGES ( At TA = 25o C unless otherwise noted ) RATINGS Collector
- Base Voltage Collector
- Emitter Voltage Emitter
- Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA ≤ 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 50 50 5 2 2 0.4 1000 +150 +150 +150 UNITS Volts Volts Volts Amps Amps Amps m W o
C C C o o
Note
1. Transistor mounted on ceramic substrate 50mm X50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2003-8
..
RATING CHARACTERISTIC CURVES ( 2SC1766PT )
CHARACTERISTICS ( At TA = 25o C unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=50V IC=0; VEB=5V VCE=2V; Note 1 IC=0.5A; Note 2 IC=2.0A IC=1A; IB=0.05A IC=1A; IB=0.05A IE=ie=0; VCB=-10V; f=1MHz IC=-0.5A; VCE=2V; f=100MHz SYMBOL ICBO ICEO MIN. TYPE MAX. 0.1 0.1 UNITS u A u A
DC Current Gain h FE
70 20
- 40...
