BC847S - NPN Transistor

WILLAS

Key Features

Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current . ,LICM : 200 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range OTJ,Tstg: -55℃to +150℃.

BC847S npn transistor by WILLAS - Datasheet Preview

Datasheet Details

Part number	BC847S
Manufacturer	WILLAS
File Size	241.42 KB
Description	NPN Transistor
Datasheet	BC847S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RoHS BC847S Multi-Chip TRANSISTOR (NPN) SOT-363 FEATURES Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current .,LICM : 200 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range OTJ,Tstg: -55℃to +150℃ CMARKING: 1C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TDC current gain CCollector-emitter saturation voltage LEBase-emitter voltage ETransition frequency WEJCollector output capacitance Symbol Test conditions V(BR)CBO Ic=10µA,IE=0 V(BR)CEO Ic=10mA,IB=0 V(BR)EBO IE=10µA,IC=0 ICBO VCB=30V,IE=0 hFE(1) VCE=5V,IC=2mA VCE(sat)(1) IC=10mA,IB=0.