Datasheet Summary
RoHS BC847S
Multi-Chip TRANSISTOR (NPN)
SOT-363
Features
Power dissipation
DPCM : 300 mW (Tamb=25℃)
TCollector current
.,LICM : 200 mA
Collector-base voltage
V(BR)CBO : 50
Operating and storage junction temperature range
OTJ,Tstg: -55℃to +150℃ CMARKING: 1C
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
ICParameter NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage RCollector cut-off current TDC current gain CCollector-emitter saturation voltage LEBase-emitter voltage ETransition frequency WEJCollector output capacitance
Symbol Test conditions
V(BR)CBO Ic=10µA,IE=0 V(BR)CEO Ic=10mA,IB=0 V(BR)EBO...
