WILLAS BC847S
NPN Transistor
| Part No. | BC847S |
|---|---|
| Datasheet | BC847S Download |
| Manufacturer |  WILLAS |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current .,LICM : 200 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range OTJ,Tstg: -55℃to +150℃ CMARKING: 1CELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) ICParameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TDC current gain CCollector-emitter saturation voltage LEBase-emitter voltage ETransition frequency WEJCollector output capacitance Symbol Test conditions V(BR)CBO Ic=10µA,IE=0 V(BR)CEO Ic=10mA,IB=0 V(BR)EBO IE=10µA,IC=0 ICBO VCB=30V,IE=0 hFE(1) VCE=5V,IC=2mA VCE(sat)(1) IC=10mA,IB=0.5mA VCE(sat)(2) IC=100mA,IB=5mA VBE(1) VCE=5V,IC=2mA VBE(2) VCE=5V,IC=10mA fT VCE=5V,IC=20mA ,f=100MHz Cob VCB=10V,IE=0,f=1MHz MIN TYP MAX UNIT 50 V 45 V 6V 15 nA 110 630 0.25 V 0.65 V 0.58 0.7 V 0.77 V 200 MHz 2 pF WEJ ELECTRONIC CO.,LTD Http:// E-mail:wej@yongerjia.com Typical Characteristics Ro...
