Datasheet Details
| Part number | SE2305GD |
|---|---|
| Manufacturer | WILLAS |
| File Size | 919.04 KB |
| Description | P-Channel High Density Trench MOSFET |
| Datasheet | SE2305GD-WILLAS.pdf |
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Overview: P-Channel High Density Trench MOSFET SE2305GD PRIMARY CHARACTERISTICS VDSS ID RDS(on)Max -20V -3.5A -1.2A 50mΩ@VGS=4.5V 65mΩ@VGS=2.
| Part number | SE2305GD |
|---|---|
| Manufacturer | WILLAS |
| File Size | 919.04 KB |
| Description | P-Channel High Density Trench MOSFET |
| Datasheet | SE2305GD-WILLAS.pdf |
|
|
|
The SE2305GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 12 V Drain Current-Continuousa @ TA = 25 °C b -Pulse Maximum Power Dissipationa ID IDM PD -4 -15 1.25 A A W Operating Junction and Storage Temperature Range TJ,TSTG - 55 to 150 °C THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambienta RthJA Note a.
| Part Number | Description |
|---|---|
| SE2302GD | N-Channel Plastic-Encapsulate MOSFETS |
| SE2310 | SOT-23 Plastic-Encapsulate MOSFETS |
| SE2311B | P-Channel MOSFET |