• Part: SE2305GD
  • Description: P-Channel High Density Trench MOSFET
  • Manufacturer: WILLAS
  • Size: 919.04 KB
Download SE2305GD Datasheet PDF
WILLAS
SE2305GD
SE2305GD is P-Channel High Density Trench MOSFET manufactured by WILLAS.
P-Channel High Density Trench MOSFET PRIMARY CHARACTERISTICS VDSS RDS(on)Max -20V -3.5A -1.2A 50mΩ@VGS=4.5V 65mΩ@VGS=2.5V SOT-23 Marking :A5S- HB A5 S- HB PACKAGE Features - High power and current handing capability - Lead free product is acquired - Surface mount package - Moisture Sensitivity Level 1 MECHANICAL DATA - Case:Molded plastic,SOT-23 - Polarity:Shown above - Terminals :Plated terminals, solderable per MIL-STD-750,Method 2026 - Epoxy : UL94-V0 rated flame retardant DESCRIPTION The SE2305GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for...