SE2311B - P-Channel MOSFET

The 6(2311B is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

• Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current1,2 Total Power Dissipation3 Linear Derating Factor VDS VGS ID @TA=25℃ ID @TA=70℃ IDM @TA=25℃ PD @TA=25℃ - Operating Junction and Storage Temperature Range TJ, TSTG Thermal Data Parameter Thermal Resistance Junction-ambient1 Symbol RθJA Rati.