Description
The 6(2311B is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.
Features
- Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current1
Pulsed Drain Current1,2 Total Power Dissipation3 Linear Derating Factor
VDS VGS ID @TA=25℃ ID @TA=70℃ IDM @TA=25℃ PD @TA=25℃
-
Operating Junction and Storage Temperature Range TJ, TSTG
Thermal Data
Parameter Thermal Resistance Junction-ambient1
Symbol RθJA
Rati.
SE2311B Datasheet
