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WILLAS
1S.0OA STU-R2F3ACPElMaOsUtNiTcS-ECHnOcTTaKpYsBuARlaRItEeR RMECOTSIFIFEREST-2S0V- 200V
SOD-123+ PACKAGE
FM120-M+ 6(THRU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to N-ChoaptnimneizleEbnoahradnscpeacmee. nt Mode Field Effect Transistor
SOD-123H
• Low power loss, high efficiency. • High current capability, low forward voltage drop.
0.146(3.7) 0.130(3.3)
0.012(0.3) Typ.
DES•• GHCiuRgahIrPdsruTirnIggOefNocar poavebrilvitoyl.tage protection.
SOT-23
• UTltrhaehiSghE-3sp4e0e4d uswsietcahidnvga. nced trench technology to provide excellent • Silicon epitaxial planar chip, metal silicon junction.
0.071(1.
SE3404 Datasheet
