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TK3906LLD03 - Plastic-Encapsulate Transistors

Description

Low power loss, high efficiency.

PNP Epitaxial Silicon Transistor

High current capability, low forward voltage drop.

High surge capability.

Features

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  • Guardring for overvoltage protection. Epitaxial Planar Die Construction high-speed switching.
  • Ultra Complementary NPN Type Available epitaxial planar(TK3904LLD03) chip, metal silicon junction.
  • Silicon Ultra-Small Surface Mount Package parts meet environmental standards of.
  • Lead-free MIL-STD-19500 /228 Also Available in Lead Free Version WILLAS Pb Free Produ Features Package outline SOD-123H C WBFBP-03D (1.0×1.0×0.5) unit: mm TOP 0.146(3.7) 0.130(3.3).

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Datasheet Details

Part number TK3906LLD03
Manufacturer WILLAS
File Size 396.03 KB
Description Plastic-Encapsulate Transistors
Datasheet download datasheet TK3906LLD03 Datasheet
Additional preview pages of the TK3906LLD03 datasheet.

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Full PDF Text Transcription

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FM120-M THRU TK3906LLD03 WBFBP-03D Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE • Batch process design, excellent power dissipation offers TRANSISTOR better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. DESCRIPTION Low power loss, high efficiency. • PNP Epitaxial Silicon Transistor • High current capability, low forward voltage drop. • High surge capability. FEATURES• Guardring for overvoltage protection. Epitaxial Planar Die Construction high-speed switching. • Ultra Complementary NPN Type Available epitaxial planar(TK3904LLD03) chip, metal silicon junction.
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