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TK3906NND03 - Plastic-Encapsulate Transistors

Description

Low power loss, high efficiency.

PNP Epitaxial Silicon Transistor

High current capability, low forward voltage drop.

Features

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  • High surge capability.
  • Guardring for overvoltage protection. Epitaxial Planar Die Construction.
  • Ultra high-speed switching. Complementary NPN Type Available (TK3904NND03).
  • Silicon epitaxial planar chip, metal silicon junction. Ultra-Small Surface Mount Package parts meet environmental standards of.
  • Lead-free Also Available in Lead Free Version MIL-STD-19500 /228 Halogen free product for packing code suffix "H".

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Datasheet preview – TK3906NND03

Datasheet Details

Part number TK3906NND03
Manufacturer WILLAS
File Size 409.38 KB
Description Plastic-Encapsulate Transistors
Datasheet download datasheet TK3906NND03 Datasheet
Additional preview pages of the TK3906NND03 datasheet.

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Full PDF Text Transcription

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FM120-M TK39011D03 THRU WBFBP-03B Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE • Batch process design, excellent power dissipation offers TRANSISTOR better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. DESCRIPTION Low power loss, high efficiency. • PNP Epitaxial Silicon Transistor • High current capability, low forward voltage drop. FEATURES• High surge capability. • Guardring for overvoltage protection. Epitaxial Planar Die Construction • Ultra high-speed switching. Complementary NPN Type Available (TK3904NND03) • Silicon epitaxial planar chip, metal silicon junction.
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